Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2006-08-01
2006-08-01
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S098000, C257S100000, C313S498000, C313S512000, C438S022000
Reexamination Certificate
active
07084435
ABSTRACT:
A light-emitting device which uses and LED having a light-emitting element being placed on a package substrate. The light-emitting element has a light-extracting surface. A fluorescent element which is formed by dispersing a fluorescent material in a transparent substance and is placed face to face with the light-extracting surface of the light emitting element and comprises a clearance gap in between. The light-emitting element generates light of a certain wavelength that emanates through the light-extracting surface into the fluorescent element where the wavelength is changed. The device further comprises an optical element which receives light from the light-emitting element through the fluorescent element and directs the light to the outside of the device.
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English Language Abstract of JP 2000-315826.
English Language Abstract of JP 2000-31548.
English Language Abstract of JP 2001-148514.
English Language Abstract of JP 2000-349346.
English Language Abstract of JP 2000-261039.
English Language Abstract of JP 2000-31531.
English Language Abstract of JP 11-298048.
English Language Abstract of JP 2000-208815.
English Language Abstract of JP 11-261114.
English Language Abstract of JP 2000-101148.
Hashimoto Takuma
Kimura Hideyoshi
Murakami Tadashi
Nishioka Koji
Shiohama Eiji
Greenblum & Bernstein P.L.C.
Kang Donghee
Matsushita Electric & Works Ltd.
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