Light-emitting device using group III nitride group compound...

Details Light-emitting device using group III nitride group compound... Light-emitting device using group III nitride group compound...

2006-08-01

2006-08-01

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S094000, C257S103000

Reexamination Certificate

active

07084421

ABSTRACT:
A light-emitting semiconductor device provides an active layer which comprises thirteen (13) layers that includes six (6) pairs of quantum barrier layers made of Al0.95In0.05N and quantum well layers made of Al0.70In0.30N, which are laminated together alternately. The semiconductor device may also comprise a quantum well layer having a high composition ratio of indium (In). Forming the quantum barrier layer and the quantum well layer to have a high composition ratio of indium (In) increases the lattice constant of the active layer of the semiconductor device.

REFERENCES:
patent: 4862471 (1989-08-01), Pankove
patent: 5945689 (1999-08-01), Koike et al.
patent: 6046464 (2000-04-01), Schetzina
patent: 6100546 (2000-08-01), Major et al.
patent: 6441393 (2002-08-01), Goetz et al.

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