Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2007-10-09
2009-12-01
Rodriguez, Armando (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S046015, C257S094000
Reexamination Certificate
active
07627009
ABSTRACT:
The present invention provides a structure of a light-emitting device which prevents the inter diffusion of impurities from the high-doped n-type InP substrate to a p-type current blocking layer. The substrate of the invention is highly doped with sulfur (S) to obtain high quality surface whose etch pit density (EPD) is less than 100 cm−2. The device includes such substrate, an optical guiding portion with an active layer, and a current blocking portion provided so as to bury the guiding portion. This current blocking portion includes, from the side of the substrate, a p-type layer, an n-type layer and another p-type layer. The device of the invention provides an n-type layer that is moderately doped with silicon between the n-type substrate and the p-type current blocking layer to prevent the inter diffusion of impurities from the substrate to the p-type layer.
REFERENCES:
patent: 5822349 (1998-10-01), Takaoka et al.
patent: 6984538 (2006-01-01), Ooi et al.
patent: 7122846 (2006-10-01), Kish et al.
patent: 2005/0078724 (2005-04-01), Massara et al.
patent: 08-250808 (1996-09-01), None
Katsuyama Tomokazu
Murata Michio
Rodriguez Armando
Smith , Gambrell & Russell, LLP
Sumitomo Electric Industries Ltd.
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