Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2006-04-04
2006-04-04
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S101000
Reexamination Certificate
active
07023026
ABSTRACT:
A light emitting device of III–V group compound semiconductor includes a first stack and a second stack. The first stack includes a semiconductor stack including a light emitting layer. A multilayered reflective structure for reflecting light from the light emitting layer and a first metal bonding-layer are successively formed on the semiconductor stack. The second stack includes a second metal bonding-layer. The first and second stacks are bonded together by bonding the first and second metal bonding-layers to each other. The multilayered reflective structure includes a transparent conductive oxide layer and a reflective metal layer adjacent thereto in this order from the side of the semiconductor stack. The thickness of the transparent conductive oxide layer is adjusted to control the light emission characteristics.
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Ho Tu-Tu
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
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