Light-emitting device of gallium nitride compound semiconductor

Details Light-emitting device of gallium nitride compound semiconductor Light-emitting device of gallium nitride compound semiconductor

1997-04-18

2000-06-27

Arroyo, Teresa M.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257 11, 257 21, 257 22, 257 76, 257 94, 257103, 257189, 257453, 257613, 257615, 257745, 257766, H01L 2714, H01L 3100, H01L 2900, H01L 4900

Patent

active

RE0367478

ABSTRACT:
A light-emitting diode of GaN compound semiconductor emits a blue light from a plane rather than dots for improved luminous intensity. This diode includes a first electrode associated with a high-carrier density n.sup.+ layer and a second electrode associated with a high-impurity density [i.sub.H -layer] H-layer. These electrodes are made up of a first Ni layer (110 .ANG. thick), a second Ni layer (1000 .ANG. thick), an Al layer (1500 .ANG. thick), a Ti layer (1000 .ANG. thick), and a third Ni layer (2500 .ANG. thick). The Ni layers of dual structure permit a buffer layer to be formed between them. This buffer layer prevents the Ni layer from peeling. The direct contact of the Ni layer with GaN lowers a drive voltage for light emission and increases luminous intensity.

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