Light-emitting device of gallium nitride compound semiconductor

Details Light-emitting device of gallium nitride compound semiconductor Light-emitting device of gallium nitride compound semiconductor

1993-01-22

1995-04-18

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257 11, 257 21, 257 22, 257 76, 257 94, 257103, 257189, 257453, 257613, 257615, 257745, 257766, H01L 2714, H01L 3100, H01L 2900, H01L 4900

Patent

active

054081203

ABSTRACT:
A light-emitting diode of GaN compound semiconductor emits a blue light from a plane rather than dots for improved luminous intensity. This diode includes a first electrode associated with a high-carrier density n.sup.+ layer and a second electrode associated with a high-impurity density i.sub.H -layer. These electrodes are made up of a first Ni layer (110 .ANG. thick), a second Ni layer (1000 .ANG. thick), an Al layer (1500 .ANG. thick), a Ti layer (1000 .ANG. thick), and a third Ni layer (2500 .ANG. thick). The Ni layers of dual structure permit a buffer layer to be formed between them. This buffer layer prevents the Ni layer from peeling. The direct contact of the Ni layer with GaN lowers a drive voltage for light emission and increases luminous intensity.

REFERENCES:
patent: 3783353 (1974-01-01), Pankove
patent: 4153905 (1979-05-01), Charmakadze et al.
patent: 4158849 (1979-06-01), Harwyld
patent: 4268842 (1981-05-01), Jacob et al.
patent: 4297717 (1981-10-01), Li
patent: 4396929 (1983-08-01), Ohki et al.
patent: 4408217 (1983-10-01), Kobayashi et al.
patent: 4473938 (1984-10-01), Kobayashi et al.
patent: 4608581 (1986-08-01), Bagratishvili et al.
patent: 4614961 (1986-09-01), Khan et al.
patent: 4855249 (1989-08-01), Akasaki et al.
patent: 4911102 (1990-03-01), Manabe et al.
patent: 4946548 (1990-08-01), Kotaki et al.
patent: 5005057 (1991-04-01), Izumiya et al.
patent: 5006908 (1991-04-01), Natsuoka et al.
patent: 5182670 (1993-06-01), Khan et al.
Boulou et al, "Light Emitting Diodes Based On GaN", Philips Tech. Rev., 37, 237-240 No. 9/10, 1977.
Patent Abstract of Japan, vol. 5 No. 145 (E-74)(817) Sep. 1981 re JP-A-5679482.
Patent Abstract of Japan, vol. 4, No. 36 (E-3) Jul. 1978 re JP-A 55009442.
U.S. application Ser. No. 7,926,022, Jan. 1994, Manabe et al.
U.S. application Ser. No. 7,708,883, Apr. 1993, Kotaki et al.
U.S. application Ser. No. 7,781,913, Jan. 1994, Kotaki et al.

Affiliated with

Also associated with

Rating

Light-emitting device of gallium nitride compound semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light-emitting device of gallium nitride compound semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light-emitting device of gallium nitride compound semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-68442