Light-emitting device of field-effect transistor type

Details Light-emitting device of field-effect transistor type Light-emitting device of field-effect transistor type

2011-03-01

2011-03-01

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S078000, C257S083000, C257S084000, C257S184000, C257S187000, C257S189000, C257S192000

Reexamination Certificate

active

07897976

ABSTRACT:
The invention of this application is a field-effect transistor type light-emitting device having an electron injection electrode, i.e. a source electrode, a hole injection electrode, i.e. a drain electrode, an emission active member disposed between the source electrode and the drain electrode so as to contact with both electrodes, and a field application electrode, i.e. a gate electrode, for inducing electrons and holes in the emission active member, which is disposed in the vicinity of the emission active member via an electrically insulating member or an insulation gap. The emission active member is made of an inorganic semiconductor material having both an electron transporting property and a hole transporting property.

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