Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2006-10-17
2006-10-17
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S098000
Reexamination Certificate
active
07122845
ABSTRACT:
The invention enhances or optimizes chromaticity of light in a light-emitting device that includes light-emitting layers. A light-emitting device includes light-emitting layers and electrode layers. The light extracted from the light-emitting device includes the light, which is incident from the light-emitting layers to the electrode layers. The film thicknesses of the electrode layers (transparent layers) are set so that the chromaticity of the extracted light approaches a predetermined value.
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Hung et al.: “Application of an ultrathin LiF/A1 bilayer in organic surface-emitting diodes” Applied Physics Letters, vol. 78, No. 4; Jan. 22, 2001.
Oliff & Berridg,e PLC
Prenty Mark V.
Seiko Epson Corporation
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