Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2007-01-10
2009-11-10
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257SE33064, C438S024000
Reexamination Certificate
active
07615792
ABSTRACT:
Light-emitting devices capable of preventing separation or alteration of a first electrode to obtain high performance, methods of manufacturing the light-emitting device, and display units are provided. A first electrode as an anode, an insulating film, an organic layer including a light-emitting layer, and a second electrode as a cathode are laminated in this order on a substrate with a planarizing layer as a base layer in between. The first electrode has a structure in which an adhesive layer, a reflective layer and a barrier layer is laminated in this order from the substrate. Alteration of the reflective layer can be prevented by the barrier layer, and the reflective layer can be prevented from being separated from the planarizing layer by the adhesive layer. The first electrode is formed through forming the adhesive layer, the reflective layer and the barrier layer on the planarizing layer, and then patterning them in order from the barrier layer.
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Japanese Office Action dated May 8, 2008.
Japanese Office Action corresponding to 2003-299258 dated Apr. 28, 2009.
Hanawa Koji
Hirano Takashi
Shibasaki Takanori
Yokoyama Seiichi
K & L Gates LLP
Purvis Sue
Sandvik Benjamin P
Sony Corporation
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