Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2011-08-30
2011-08-30
Maldonado, Julio J (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S013000, C257S094000, C438S026000, C438S039000, C438S047000
Reexamination Certificate
active
08008685
ABSTRACT:
Provided are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, an active layer between the first conductive type semiconductor layer and the second conductive type layer. At least one lateral surface of the light emitting structure layer has cleavage planes of an A-plane and an M-plane.
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Birch & Stewart Kolasch & Birch, LLP
LG Innotek Co. Ltd.
Maldonado Julio J
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