Light-emitting device, method of fabricating the device, and...

Details Light-emitting device, method of fabricating the device, and... Light-emitting device, method of fabricating the device, and...

2006-05-09

2006-05-09

Patel, Ashok (Department: 2879)

Electric lamp and discharge devices

With luminescent solid or liquid material

Solid-state type

C313S512000, C362S800000, C257S098000, C257S103000

Reexamination Certificate

active

07042150

ABSTRACT:
A semiconductor light-emitting device has a substrate (1), a semiconductor layer (3) and a light-emitting layer (5), and the substrate is furnished on the surface thereof underlying the semiconductor layer with an irregular construction possessing inclined lateral surfaces forming an angle θ to the substrate in the range of 30°<θ<60°, to provide a light-emitting device enhanced in the effect of fetching light.

REFERENCES:
patent: 6066861 (2000-05-01), Hohn et al.
patent: 6635363 (2003-10-01), Duclos et al.
patent: 6791259 (2004-09-01), Stokes et al.
patent: 2002-164296 (2002-06-01), None
Kazuyuki Tadatomo, et al.; “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy”; Japan Journal of Applied Physics; vol. 40; Part 2, No. 6B, Jun. 15, 2001; pp. L 583-L 585.

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