Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-02-22
2010-11-09
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000
Reexamination Certificate
active
07829894
ABSTRACT:
An object of the invention is to provide a method for manufacturing a light emitting device capable of reducing deterioration of elements due to electrostatic charge caused in manufacturing the light emitting device. Another object of the invention is to provide a light emitting device in which defects due to the deterioration of elements caused by the electrostatic charge are reduced. The method for manufacturing the light emitting device includes a step of forming a top-gate type transistor for driving a light emitting element. In the step of forming the top-gate type transistor, when processing a semiconductor layer, a first grid-like semiconductor layer extending in rows and columns is formed over a substrate. The plurality of second island-like semiconductor layers are formed between the first semiconductor layer. The plurality of second island-like second semiconductor layers serve as an active layer of the transistor.
REFERENCES:
patent: 4792210 (1988-12-01), Maurice
patent: 5234541 (1993-08-01), Shannon et al.
patent: 5650834 (1997-07-01), Nakagawa et al.
patent: 5824235 (1998-10-01), Yamazaki et al.
patent: 5938942 (1999-08-01), Yamazaki et al.
patent: 6777254 (2004-08-01), Yamazaki et al.
patent: 2004/0079950 (2004-04-01), Takayama et al.
patent: 2005/0037552 (2005-02-01), Yamazaki et al.
patent: 2005/0046346 (2005-03-01), Tsuchiya et al.
patent: 60-251665 (1985-12-01), None
patent: 61-088557 (1986-05-01), None
patent: 05-203985 (1993-08-01), None
patent: 05-333377 (1993-12-01), None
patent: 06-075246 (1994-03-01), None
patent: 06-301058 (1994-10-01), None
patent: 07-225393 (1995-08-01), None
Murakami Satoshi
Sakakura Masayuki
Nguyen Cuong Q
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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