Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-02-24
2008-09-09
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S035000, C257S081000, C257S082000, C257S094000, C257S095000, C257S098000, C257S099000, C257S100000, C257S103000, C257S117000, C257S118000
Reexamination Certificate
active
07423284
ABSTRACT:
A light-emitting device includes a GaN substrate; a n-type AlxGa1-xN layer on a first main surface side of the GaN substrate; a p-type AlxGa1-xN layer positioned further away from the GaN substrate compared to the n-type AlxGa1-xN layer; a multi-quantum well (MQW) positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In this light-emitting device, the p-type AlxGa1-xN layer side is down-mounted and light is emitted from the second main surface, which is the main surface of the GaN substrate opposite from the first main surface. hemispherical projections are formed on the second main surface of the GaN substrate.
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Katayama Koji
Kitabayashi Hiroyuki
Nagai Youichi
Darby & Darby
Soward Ida M
Sumitomo Electric Industries Ltd.
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