Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2010-12-09
2011-11-08
Fourson, III, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257SE33065
Reexamination Certificate
active
08053805
ABSTRACT:
Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and an electrode comprising a pad part and a finger part on the light emitting structure layer. The pad part comprises a pattern in which at least one opening is defined, and the finger part comprises a pattern electrically connected to the pad part and linearly extending from the pad part.
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Korean Notice of Allowance dated Jul. 7, 2010 issued in Application No. 10-2009-0123005.
Choi Byeong Kyun
Choo Sung Ho
Kim Sung Kyoon
Lim Woo Sik
Fourson, III George
KED & Associates LLP
LG Innotek Co. Ltd.
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