Light emitting device having protrusion and recess structure...

Details Light emitting device having protrusion and recess structure... Light emitting device having protrusion and recess structure...

2011-07-26

2011-07-26

Luu, Chuong A. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S082000, C257S088000, C257S098000

Reexamination Certificate

active

07985972

ABSTRACT:
The semiconductor light emitting device having a protrusion and recess structure includes: a lower clad layer disposed on a substrate; an active layer formed on one portion of a top surface of the lower clad layer; an upper clad layer formed on the active layer; a first electrode formed on the upper clad layer; and a second electrode that is formed on a protrusion and recess structural pattern region formed on a portion of the top surface of the lower clad layer not occupied by the active layer.

REFERENCES:
patent: 6051847 (2000-04-01), Oku et al.
patent: 6551848 (2003-04-01), Kwak et al.
patent: 6969873 (2005-11-01), Hata et al.
patent: 2005/0082562 (2005-04-01), Ou et al.
patent: 2006/0054907 (2006-03-01), Lai
Office Action issued by Korean Intellectual Property Office on Mar. 24, 2008 (with English Translation).
KR 2005-36737, Apr. 20, 2005, Search Report, With English Abstract.
JP 2002-01632, Jan. 18, 2002, Search Report, With English Abstract.

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