Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2011-08-16
2011-08-16
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S098000, C257S099000, C257S100000
Reexamination Certificate
active
07999273
ABSTRACT:
A light emitting device is provided which includes a substrate, a first semiconductor layer having a first region and a second region on the substrate; ac active layer is formed on the first region of the first semiconductor layer; a second semiconductor layer is formed on the active surface layer and the portion surface of the second semiconductor layer is a rough surface; a plurality of pillar structures with a hollow structure, and both of the outer surface and inner surface of the pillar structures are rough surface; a transparent conductive layer is formed to cover the plurality of pillar structures; a first electrode is formed on the transparent conductive layer; and a second electrode is formed on the second region of the first semiconductor layer.
REFERENCES:
patent: 7166870 (2007-01-01), Erchak et al.
patent: 7345321 (2008-03-01), Wu et al.
patent: 2005/0202581 (2005-09-01), Sugawara
patent: 2006/0234408 (2006-10-01), Lee et al.
patent: 2008/0303018 (2008-12-01), Kim et al.
Kao Lin-Chieh
Tsai Tzong-Liang
Huga Optotech Inc.
Jianq Chyun IP Office
Tran Tan N
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