Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2011-08-23
2011-08-23
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S013000, C257S094000, C257S098000, C257SE33064
Reexamination Certificate
active
08003993
ABSTRACT:
A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
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Cho Hyun Kyong
Jang Jun Ho
Kim Sun Kyung
Birch & Stewart Kolasch & Birch, LLP
LG Electronics Inc.
LG Innotek Co. Ltd.
Soward Ida M
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