Light emitting device having light extraction structure

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

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Details

C257S013000, C257S094000, C257S098000, C257SE33064

Reexamination Certificate

active

08003993

ABSTRACT:
A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

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