Light emitting device having isolating insulative layer for...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

Reexamination Certificate

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C257S082000, C257S088000, C257SE33023, C257SE33056

Reexamination Certificate

active

07947993

ABSTRACT:
Disclosed is a light emitting device having an isolating insulative layer for isolating light emitting cells from one another and a method of fabricating the same. The light emitting device comprises a substrate and a plurality of light emitting cells formed on the substrate. Each of the light emitting cells includes a lower semiconductor layer, an upper semiconductor layer positioned on one region of the lower semiconductor layer, and an active layer interposed between the lower and upper semiconductor layers. Furthermore, an isolating insulative layer is filled in regions between the plurality of light emitting cells to isolate the light emitting cells from one another. Further, wirings electrically connect the light emitting cells with one another. Each of the wirings connects the lower semiconductor layer of one light emitting cell and the upper semiconductor layer of another light emitting cell adjacent to the one light emitting cell. Accordingly, there can be provided a light emitting device wherein particles are prevented from remaining between the plurality of light emitting cells to prevent current leakage between the light emitting cells. Further, there can be provided a light emitting device wherein the regions between light emitting cells are filled with an isolating insulative layer to facilitate formation of the wirings.

REFERENCES:
patent: 2002/0153529 (2002-10-01), Shie
patent: 2004/0211970 (2004-10-01), Hayashimoto et al.
patent: 2006/0169993 (2006-08-01), Fan et al.
patent: 2008/0164485 (2008-07-01), Lee
patent: 10-0635346 (2006-10-01), None
patent: 200627679 (2006-08-01), None
patent: 2004-023568 (2004-03-01), None
patent: 2006-080609 (2006-08-01), None
Taiwanese Preliminary Notice of the First Office Action dated Jan. 12, 2010.
Da-Ren Zhuang,VLSI Manufacturing Technique, Gao-Li Library, Ltd., Dec. 10, 2003, pp. 493-494 and 515-516, 5th Edition.

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