Light emitting device having first and second cladding layers wi

Details Light emitting device having first and second cladding layers wi Light emitting device having first and second cladding layers wi

1995-02-28

1995-12-12

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 94, 257103, 372 45, H01L 2906, H01S 319

Patent

active

054752370

ABSTRACT:
A light emitting device is formed of a substrate, a first cladding layer on the substrate, an active layer on the first cladding layer, and a second cladding layer on the active layer. A carrier blocking layer also serving as an etching stopping layer during formation of the second cladding layer is provided between the active layer and the second cladding layer. Both sides of the second cladding layer are filled by a semiconductor layer having a resistance substantially higher than the other layers which the filler layer is in contact with. The first and second cladding layers, active layer, carrier blocking layer, and semiconductor layer of higher resistance comprise a II-VI compound semiconductor.

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patent: 5291507 (1994-03-01), Haase et al.
patent: 5319219 (1994-06-01), Cheng et al.
patent: 5324963 (1994-06-01), Kamata
patent: 5404027 (1995-04-01), Haase et al.
Electronics Letters, vol. 28, No. 19, 10 Sep. 1992, pp. 1798, 1799, Okuyama et al. "ZnSe/ZnMgSSe Blue Laser Diode".
Applied Physics Letters, "Distributed Feedback Operatio of Optically Pumped ZnSe Quantum-Well Lasers in the Blue-Green", vol. 60, No. 20, 18 May 1992, New York, pp. 2460-2462, Ishihara et al.
Hagerott et al., Applied Physics Letters, (60(23), 8 Jun. 1992, "Indium Tin Oxide as Transparent Electrode . . . quantum well light emitter".

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