Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1996-04-01
1998-12-08
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257102, 372 46, H01L 3300
Patent
active
058474153
ABSTRACT:
A pair of SiO.sub.2 stripe masks are formed on a p-InP substrate (31) with including a p-InP clad layer (32), an active layer (33) and an n-InP clad layer (34) is formed on the p-InP substrate (31) at the 1.5 .mu.m exposed area according to MOVPE selective growth process. Both sides of the optical waveguide are buried with pnpn current blocking structure according to the MOVPE selective growth, wherein a p-InP layer (36) and n-InP layer (37) are formed, then a surface of the n-InP layer (37) is inverted to p-type to form a p-InP inversion layer (38) according to Zn open tube diffusion process carried out in MOVPE system, thereby the interconnection between the n-InP layer (37) and the n-InP clad layer (34) is prevented, and then a p-InP layer (39) and n-InP layer (40) are formed. An n-InP layer (41) is formed thereon.
REFERENCES:
patent: 4849372 (1989-07-01), Takemoto
patent: 5111471 (1992-05-01), Hattori
T. Kato et al, "2.5 GB/S Modulation Characteristics of DFB-LD/Modulator Integrated Light Source Fabricated by Selective MOVPE", The Institute of Electronics, Information and Communication Engineers, 1993, Autumn Congress, C-98, pp. 4-178 w/partial English translation.
K. Uomi et al, "Low Threshold Current (<1mA) Operation of 1.3 .mu.m Strained-MQW CBPBH Lasers", The Institute of Electronics, Information and Communication Engineers, 1994, Vernal Congress, C-213, pp. 4-210 w/partial English translation.
K. Uomi et al, "Extremely Low Threshold (0.56 mA) Operation in 1.3 .mu.m InGaAsP/InP Compressive-Strained MQW Lasers", Electronics Letters, 24 Nov. 1994, vol. 30, No. 24, pp. 2037-2038.
T. Terakado et al, Submilliamp Threshold 1.3 .mu.m Strained MQW Lasers with Novel P-Substrate Buried-Heterostructure Grown by MOVPE using TBA and TBP, Electronics Letters, 7th Dec. 1995, vol. 31, No. 25, pp. 2182-2183.
NEC Corporation
Tran Minh-Loan
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