Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2011-03-01
2011-03-01
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S082000, C257S164000, C257SE51022, C257SE21381
Reexamination Certificate
active
07897982
ABSTRACT:
A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.
REFERENCES:
patent: 4298869 (1981-11-01), Okuno
patent: 4329625 (1982-05-01), Nishizawa et al.
patent: 4435064 (1984-03-01), Tsukada et al.
patent: 4924289 (1990-05-01), Matsuoka
patent: 5463280 (1995-10-01), Johnson
patent: 5491349 (1996-02-01), Komoto et al.
patent: 5583349 (1996-12-01), Norman et al.
patent: 5648977 (1997-07-01), Miyazaki
patent: 5986324 (1999-11-01), Adlerstein et al.
patent: 6057567 (2000-05-01), Bayraktaroglu
patent: 6180960 (2001-01-01), Kusuda et al.
patent: 6194743 (2001-02-01), Kondoh et al.
patent: 6262531 (2001-07-01), Inoguchi et al.
patent: 6388696 (2002-05-01), Taninaka et al.
patent: 6410942 (2002-06-01), Thibeault et al.
patent: 6412971 (2002-07-01), Wojnarowski et al.
patent: 6461019 (2002-10-01), Allen
patent: 6486499 (2002-11-01), Krames et al.
patent: 6514782 (2003-02-01), Wierer, Jr. et al.
patent: 6547249 (2003-04-01), Collins et al.
patent: 6641294 (2003-11-01), Lefebvre
patent: 6800999 (2004-10-01), Duggal et al.
patent: 6885035 (2005-04-01), Bhat et al.
patent: 6957899 (2005-10-01), Jiang et al.
patent: 7009199 (2006-03-01), Hall
patent: 7034470 (2006-04-01), Cok et al.
patent: 7511311 (2009-03-01), Kususe et al.
patent: 2001/0007360 (2001-07-01), Yoshida et al.
patent: 2001/0032985 (2001-10-01), Bhat et al.
patent: 2002/0113246 (2002-08-01), Nagai et al.
patent: 2002/0123164 (2002-09-01), Slater et al.
patent: 2002/0158261 (2002-10-01), Lee et al.
patent: 1030338 (2000-08-01), None
patent: 1030377 (2000-08-01), None
patent: 1223625 (2002-07-01), None
patent: 59-206873 (1984-11-01), None
patent: 62-273755 (1987-11-01), None
patent: 04-023154 (1992-02-01), None
patent: 70-86691 (1995-03-01), None
patent: 09-153644 (1997-06-01), None
patent: 10-107316 (1998-04-01), None
patent: 10-275935 (1998-10-01), None
patent: 11-150303 (1999-06-01), None
patent: 2000-68555 (2000-03-01), None
patent: 2000-101136 (2000-04-01), None
patent: 2000-349333 (2000-12-01), None
patent: 2001-156331 (2001-06-01), None
patent: 2001-177146 (2001-06-01), None
patent: 2001-237458 (2001-08-01), None
patent: 2001-307506 (2001-11-01), None
patent: 2001-351789 (2001-12-01), None
patent: 2002-26384 (2002-01-01), None
patent: 2004-006582 (2004-01-01), None
patent: 2001-150718 (2005-06-01), None
patent: 3822545 (2006-06-01), None
patent: 4195041 (2008-10-01), None
patent: 01/41219 (2001-06-01), None
patent: 01/47039 (2001-06-01), None
Non-Final Office Action issued Feb. 3, 2010 in U.S. Appl.11/705,205.
Schad, Sven-Silvius, “Extraction Efficiency of GaN-Based LEDs”, Annual Report 2000, Optoelectronics Department, University of Ulm, pp. 99-104.
Office Action dated Feb. 24, 2009 (in co-pending U.S. Appl. No. 11/705,205).
Extended European Search Report issued in EP Patent Application No. 07118916.1 dated Jan. 24, 2008.
Japanese Notice of Grounds for Rejection mailed Feb. 5, 2008 with English Translation issued in JP Patent Application No. 2006-117739.
Jin-Ping AO, et al., “Monolithic Blue LED Series Arrays for High-Voltage AC Operation”, presented at the International Workshop on Nitride Semiconductors (IWN 2002) in Auchen, Germany, Jul. 22-25, 2002.
Japanese Office action for Japanese Application No. 2002-249957 dated Apr. 26, 2005, 3 pages.
Office Action dated Feb. 21, 2006 issued in Japanese Patent Application Serial No. 2002-249957, 2 pages. (with English translation).
Office Action dated Apr. 3, 2006 issued in Russian Patent Application 2005103616/28 (094810), 5 pages (with English translation).
Office Action dated Dec. 29, 2006 issued by the China Patent Office in Chinese Patent Application No. 038206226, 12 pages.
Office Action dated Sep. 9, 2008 (in co-pending U.S. Appl. No. 11/705,205).
Supplementary European Search Report dated Feb. 2, 2007 and issued Application No. PCT/JP0310922 (3 pages).
Notice of Allowance, dated Jun. 10, 2009, for co-pending U.S. Appl. No. 12/352,271.
Office Action, dated Jun. 23, 2009, for co-pending U.S. Appl. No. 12/352,240.
Notice of Allowance, dated Oct. 5, 2009, for co-pending U.S. Appl. No. 12/352,280.
Office Action, dated Sep. 10, 2009, for co-pending U.S. Appl. No. 12/060,693.
Office Action, dated Aug. 4, 2009, for co-pending U.S. Appl. No. 11/705,205.
Extended European Search Report issued Aug. 11, 2009 in European Patent Application No. 09000561.2.
Japanese Office Action issued Aug. 31, 2009 in Japanese Application No. 2009-121322.
Japanese Office Action issued Aug. 31, 2009 in Japanese Application No. 2009-121325.
Japanese Office Action issued Aug. 31, 2009 in Japanese Application No. 2008-145862.
Japanese Office Action issued Nov. 20, 2009 in Japanese Patent Application No. 2009-120874.
Japanese Office Action issued Nov. 20, 2009 in Japanese Patent Application No. 2009-216697.
Japanese Office Action issued Nov. 20, 2009 in Japanese Patent Application No. 2009-216699.
Japanese Office Action issued Nov. 20, 2009 in Japanese Patent Application No. 2009-216703.
Final Office Action dated Aug. 5, 2010 in U.S. Appl. No. 11/705,205.
Final Office Action dated Aug. 12, 2010 in U.S. Appl. No. 12/352,240.
Non-Final Office Action of Jan. 5, 2011 in U.S. Appl. No. 12/352,296.
Ao Jin-Ping
Ono Yasuo
Sakai Shiro
H.C. Park & Associates PLC
Nguyen Dilinh P
Sefer A.
Seoul Semiconductor Co. Ltd.
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