Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2008-02-25
2010-06-15
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S088000, C257S091000, C438S680000, C438S681000, C362S555000
Reexamination Certificate
active
07737458
ABSTRACT:
A light emitting device having a straight-line shape is provided with: a pair of first and second electrodes each having a straight-line shape which face each other; and a phosphor layer having a straight-line shape provided so as to be sandwiched between the pair of electrodes, wherein at least one of the pair of first and second electrodes is a transparent electrode, at least one buffer layer is provided so as to be sandwiched between the first or second electrode and the phosphor layer, and the buffer layer makes the height of a potential barrier between the electrode and the phosphor layer which sandwich the buffer layer lower than the height of a Schottky barrier when the electrode and the phosphor layer are brought into direct contact.
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Aoyama Toshiyuki
Hasegawa Kenji
Nasu Shogo
Odagiri Masaru
Ono Masayuki
Dang Phuc T
McDermott Will & Emery LLP
Panasonic Corporation
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