Light-emitting device having a roughened surface with...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Reexamination Certificate

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C257S098000, C257SE33074

Reexamination Certificate

active

07834369

ABSTRACT:
This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.

REFERENCES:
patent: 6791117 (2004-09-01), Yoshitake et al.
patent: 7180088 (2007-02-01), Sugawara
patent: 2006/0204865 (2006-09-01), Erchak et al.
patent: 2008/0191190 (2008-08-01), Tsai et al.
patent: 1674306 (2005-09-01), None

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