Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2011-01-11
2011-01-11
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S040000, C257SE51018, C257SE51022
Reexamination Certificate
active
07868331
ABSTRACT:
Disclosed herein is a light-emitting device comprising a transparent or semi-transparent first substrate, a second substrate provided opposite to the first substrate, a transparent or semi-transparent first electrode provided on the first substrate, a second electrode provided on the second substrate so as to be opposite to the first electrode, and a light-emitting layer which contains a metal oxide semiconductor porous body, by the surface of which an organic light-emitting material is supported, and is provided between the first electrode and the second electrode.
REFERENCES:
patent: 5681442 (1997-10-01), Ogawa et al.
patent: 5958573 (1999-09-01), Spitler et al.
patent: 6185032 (2001-02-01), Lee et al.
patent: 6762553 (2004-07-01), Yokogawa et al.
patent: 2002/0053871 (2002-05-01), Seo
patent: 2003/0057828 (2003-03-01), Roitman et al.
patent: 2004/0246408 (2004-12-01), Ando et al.
patent: 2007/0085076 (2007-04-01), Yamamoto et al.
patent: 07-057871 (1995-03-01), None
patent: 09-007763 (1997-01-01), None
patent: 9-328680 (1997-12-01), None
patent: 11-162640 (1999-06-01), None
patent: 11-162641 (1999-06-01), None
patent: 11-288785 (1999-10-01), None
patent: 11-329752 (1999-11-01), None
patent: 2001-052857 (2001-02-01), None
patent: 2001-126872 (2001-05-01), None
patent: 2001-202827 (2001-07-01), None
patent: 2002-203687 (2002-07-01), None
patent: 2002-237382 (2002-08-01), None
patent: 2003-115385 (2003-04-01), None
Chinese Office Action, with English Translation, issued in Chinese Patent Application No. CN 200480016589.9, dated Apr. 11, 2008.
Japanese Office Action issued in Japanese Patent Application No. 2005-506990, mailed Aug. 11, 2009.
Aoyama Toshiyuki
Hasegawa Kenji
Hori Kenya
Nago Kumio
Odagiri Masaru
Fahmy Wael M
Kalam Abul
McDermott Will & Emery LLP
Panasonic Corporation
LandOfFree
Light-emitting device having a metal oxide semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light-emitting device having a metal oxide semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light-emitting device having a metal oxide semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2693473