Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2011-08-23
2011-08-23
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S101000, C257SE51024
Reexamination Certificate
active
08003977
ABSTRACT:
It is an object of the present invention to provide a light emitting element with improved luminous efficiency, a reduced drive voltage, and improved degree of deterioration with respect to driving time. According to a light emitting element including a first electrode; a second electrode; and a light emitting laminated body formed therebetween, the light emitting laminated body has at least a first layer, a second layer, and a third layer in this order, the first layer is a layer having a carrier transporting property, the third layer is a layer including an emission center material and a host material in which the emission center material is dispersed, the second layer has an energy gap larger than that of the first layer and equal to or larger than that of the host material, and the second layer has a thickness of 0.1 nm or more and less than 5 nm.
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Iwaki Yuji
Ohsawa Nobuharu
Seo Satoshi
Fahmy Wael M
Husch & Blackwell LLP
Kalam Abul
Semiconductor Energy Laboratory Co,. Ltd.
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