Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-01-28
2011-12-06
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S079000, C257S094000, C257SE33001, C257SE33005, C257SE33006
Reexamination Certificate
active
08071973
ABSTRACT:
Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a passivation layer protecting a surface of the light emitting structure. The passivation layer includes a first passivation layer on a top surface of the light emitting structure and a second passivation layer having a refractive index different from that of the first passivation layer, the second passivation layer being disposed on a side surface of the light emitting structure. The second passivation layer has a refractive index greater than that of the first passivation layer.
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LH Innotek., Ltd.
McKenna Long & Aldridge LLP
Soward Ida M
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