Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-04-17
2007-04-17
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S098000
Reexamination Certificate
active
10708047
ABSTRACT:
A light-emitting device includes a compound substrate including a high thermal conductive layer and a substrate disposed around the high thermal conductive layer, an adhesive layer formed on the compound substrate, and a light-emitting stack layer formed on the adhesive layer. Therefore, problems in cutting a metal layer in a grain cutting process are solved.
REFERENCES:
patent: 6396082 (2002-05-01), Fukasawa et al.
patent: 6645783 (2003-11-01), Brunner et al.
patent: 6874910 (2005-04-01), Sugimoto et al.
patent: 6876005 (2005-04-01), Hsieh et al.
patent: 2004/0104393 (2004-06-01), Liu et al.
Hsieh Min-Hsun
Liu Wen-Huang
Wang Jen-Shui
Epistar Corporation
Hsu Winston
Prenty Mark V.
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