Patent
1982-03-04
1984-10-16
Edlow, Martin H.
357 16, 357 61, 357 88, H01L 3300
Patent
active
044778244
ABSTRACT:
A single heterostructure light emitting device which provides high speed and high efficiency. The device includes adjacent n- and p- regions of a mixed-crystal III-V semiconductor such as GaAlAs. A lightly-doped wide bandgap injection layer is utilized to force recombination in the more heavily-doped adjacent region. The latter region also includes a graded bandgap which allows photon recycling for high efficiency.
REFERENCES:
patent: 3634872 (1972-01-01), Umeda
patent: 3852591 (1974-12-01), Lee et al.
patent: 3958265 (1976-05-01), Charmakadze et al.
patent: 4122486 (1978-10-01), Ono et al.
patent: 4275404 (1981-06-01), Cassiday
patent: 4296425 (1981-10-01), Nishizawa
Journal of Applied Physics, vol. 48, No. 6, Jun. 1977, pp. 2485-2492.
The Bell System Technical Journal, vol. 59, No. 2, Feb. 1980, pp. 161-168.
AT&T Bell Laboratories
Birnbaum Lester H.
Edlow Martin H.
Mintel William A.
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