Light emitting device for achieving high luminous efficiency and

Details Light emitting device for achieving high luminous efficiency and Light emitting device for achieving high luminous efficiency and

1993-10-21

1994-07-12

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 13, 257 21, 257 23, 257 53, 257 79, 257 80, 257 82, 257 86, 372 43, 372 45, H01L 2900, H01L 3300, H01L 3112, H01S 318

Patent

active

053291352

ABSTRACT:
A light emitting device has an indium gallium arsenide phosphide luminescent layer between a first clad layer of n-type indium phosphide and a second clad layer of p-type indium phosphide, and a strained barrier layer of p-type indium aluminum arsenide is inserted between the luminescent layer and the second clad layer so as to increase the potential barrier therebetween, thereby improving the luminous efficiency and the saturation point of the light output.

REFERENCES:
patent: 4680602 (1987-07-01), Watanabe et al.
patent: 4788688 (1988-11-01), Hasenberg et al.
patent: 4992837 (1991-02-01), Sakai et al.
Patent Abstracts of Japan, vol. 12, No. 285 (E-668), Oct. 14, 1988; and JP-A-63 128 785 (NEC Corp.), Jun. 1, 1988.
Applied Physics Letters, vol. 55, No. 18, Oct. 30, 1989, New York US, pp. 1877-1878, F. L. Schuermeyer et al., "Band-edge alignment in heterostructures".
IEEE Journal of Quantum Electronics, "Reliability of High Radiance in GaAsP/InP LED's Operating in the 1.2-1.3 .mu.m Wavelength", vol. QE-17, No. 2, Feb. 1981.
Kabushikikaisha, Tosho, "Optical Communication Device Engineering--Light Emitting Device/Light Intercepting Device" (1984).

Affiliated with

Also associated with

Rating

Light emitting device for achieving high luminous efficiency and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light emitting device for achieving high luminous efficiency and, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting device for achieving high luminous efficiency and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-398551