Light emitting device fabrication method thereof, and light...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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C257S615000, C438S046000

Reexamination Certificate

active

08049241

ABSTRACT:
A light emitting device is provided. The light emitting device comprises a conductive substrate, a reflection layer, a support layer, an ohmic contact layer, and a light emitting semiconductor layer. The reflection layer is disposed on the conductive substrate. The support layer is disposed partially on the reflection layer. The ohmic contact layer is disposed at the side of the support layer. The light emitting semiconductor layer is disposed on the ohmic contact layer and the support layer.

REFERENCES:
patent: 6797987 (2004-09-01), Chen
patent: 6818467 (2004-11-01), Lee et al.
patent: 2003/0111667 (2003-06-01), Schubert
patent: 2003/0141506 (2003-07-01), Sano et al.
patent: 2005/0245018 (2005-11-01), Bogner et al.
patent: 2006/0043399 (2006-03-01), Miyagaki et al.
patent: 2007/0290215 (2007-12-01), Kato et al.
patent: 2008/0006836 (2008-01-01), Lee
patent: 2010/0038667 (2010-02-01), Windisch
patent: 10 2007 029 370 (2007-11-01), None
patent: 2008-263015 (2008-10-01), None
patent: 2008-283096 (2008-11-01), None
patent: 2009-004471 (2009-01-01), None
patent: 10-2007-0120424 (2007-12-01), None
patent: WO 2006/043796 (2006-04-01), None
patent: WO 2008/092417 (2008-08-01), None
patent: WO 2008/135013 (2008-11-01), None

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