Light-emitting device comprising a gallium-nitride-group...

Details Light-emitting device comprising a gallium-nitride-group... Light-emitting device comprising a gallium-nitride-group...

2005-01-11

2005-01-11

Munson, Gene M. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S097000, C257S101000, C257S102000, C257S103000, C257S190000, C257S201000, C257S615000

Reexamination Certificate

active

06841800

ABSTRACT:
In the light-emitting gallium-nitride-group compound semiconductor devices using a substrate, the operating voltage is lowered and at the same time the occurrence of crack during crystal growth is suppressed, resulting in an improved manufacturing yield rate. The device includes a stacked structure of an n-type layer, a light-emitting layer and a p-type layer formed in the foregoing order on a substrate, and an n-side electrode formed on the surface of the n-type layer. The n-type layer is a laminate layer composed of, in the order from the substrate, first n-type layer and a second n-type layer having a carrier concentration higher than that of the first n-type layer. As the contact resistance between the n-type layer and the n-side electrode formed thereon is reduced, the operating voltage of a light-emitting device is lowered, and the power consumption decreased.

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