Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2006-10-26
2011-10-25
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S072000, C257SE33062, C257SE33065
Reexamination Certificate
active
08044426
ABSTRACT:
A light emitting device includes a first substrate and a second substrate. Each substrate may be subdivided into a contact region and a pixel region. Conductive elements positioned in each of the contact region and pixel region of the first substrate may be of substantially the same height.
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Office Action issued in corresponding Taiwanese Patent Application No. 095141799; issued Dec. 29, 2009.
Office Action issued in corresponding German Patent Application No. 10 2006 047 433.3; issued Apr. 7, 2010.
Choi Hee Dong
Hwang Kwang Jo
Park Jae Hee
Brinks Hofer Gilson & Lione
Huber Robert
LG Display Co. Ltd.
Malsawma Lex
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