Light emitting device based on indirect-bandgap materials

Details Light emitting device based on indirect-bandgap materials Light emitting device based on indirect-bandgap materials

2005-04-19

2005-04-19

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S082000, C257S086000, C257S093000, C257S103000

Reexamination Certificate

active

06881977

ABSTRACT:
This invention regards to novel light emitting device based on indirect bandgap materials. This device makes efficient electroluminescence possible in indirect-bandgap materials. With the quantum mechanically tunneling effect and carrier confinement, and/or small-scale roughness (in nano-meter range), and/or special (TO) phonon-assisted processes, the additional momentum required for radiative recombination of electrons and holes in indirect-bandgap materials could be provided to enhance luminescence at bandgap energy. Also, the tunneled carriers in the upper bands of large energy could directly transit to the bottom of bands by emitting photons at corresponding energy different from bandgap energy.

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