Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-08-08
2010-06-08
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S012000, C372S045013
Reexamination Certificate
active
07732823
ABSTRACT:
In order to make it possible to grow up a light emitting device easily on a substrate made of a Si material system while production of an anti-phase domain can be prevented and a sufficiently high luminous efficiency can be obtained, the light emitting device is configured as a device which includes a substrate (1) formed from a Si material system, a Si1-x-yGexCy(0<x≦1, 0≦y≦0.005) layer (2) and quantum dots (3) made of a direct transition type compound semiconductor. The quantum dots (3) are included in the Si1-x-yGexCy(0<x≦1, 0≦y≦0.005) layer (2) formed on the substrate (1).
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Fujitsu Limited
Kratz Quintos & Hanson, LLP
Rao Steven H
Weiss Howard
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