Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2010-04-08
2011-11-22
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S088000, C257S093000, C257S098000, C257S099000, C257S774000, C257SE25032
Reexamination Certificate
active
08063407
ABSTRACT:
There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.
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Choi Pun Jae
Lee Jin Hyun
Lee Si Hyuk
Myoung Seon Young
Park Ki Yeol
Chi Suberr
McDermott Will & Emery LLP
Nguyen Ha Tran T
Samsung LED Co., Ltd.
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