Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-11-19
2010-06-15
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S079000, C257S083000, C257S084000, C257S088000, C257S091000, C257SE29117
Reexamination Certificate
active
07737449
ABSTRACT:
The present invention provides a highly stable light emitting device having high light-emitting efficiency (light-extraction efficiency) with high luminance and low power consumption, and a method of manufacturing thereof. A partition wall and a heat-resistant planarizing film are formed of a same material so as to be well-adhered to each other, thereby reducing material costs. Either an anode or a cathode is formed on the heat-resistant planarizing film. The partition wall and the heat-resistant planarizing film is adhered to each other without inserting a film having different refractive index therebetween, and therefore reflection of light is not caused in an interface.
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Office Action (Application No. 200410078765.3) dated Mar. 2, 2007.
Ikeda Hisao
Matsuda Yutaka
Nagai Masaharu
Saito Keiko
Sakakura Masayuki
Au Bac H
Picardat Kevin M
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co. Ltd
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