Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-03-29
2011-03-29
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S103000, C257S079000, C257SE33002, C257SE33012, C257SE33013, C257SE33028
Reexamination Certificate
active
07915628
ABSTRACT:
A light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a refractive layer on the active layer, and a second conductive semiconductor layer on the refractive layer.
REFERENCES:
patent: 2006/0260671 (2006-11-01), Ohta et al.
patent: 2007/0290224 (2007-12-01), Ogawa
Birch & Stewart Kolasch & Birch, LLP
LG Innotek Co. Ltd.
Liu Benjamin Tzu-Hung
Ngo Ngan
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