Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2011-03-01
2011-03-01
Philogene, Haissa (Department: 2821)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S022000, C257S099000, C257S778000, C257SE33068, C438S022000, C438S034000, C438S108000, C438S109000, C438S118000, C135S145000, C135S022000, C135S022000
Reexamination Certificate
active
07897981
ABSTRACT:
The present invention provides a light emitting device comprising a first semiconductor substrate including a light emitting cell block having a plurality of light emitting cells connected in series on one surface thereof; a second semiconductor substrate having one surface formed with a rectifying bridge and the other surface bonded to the other surface of the first semiconductor substrate; and a submount substrate to which the second semiconductor substrate is flip-chip bonded to be in contact with the one surface of the second semiconductor substrate, wherein rectified power is applied to the light emitting cell block through the rectifying bridge. The present invention further provides a method of manufacturing the light emitting device. The light emitting device and the method of manufacturing the same according to the present invention have advantages in that a flicker effect generated from an AC power source can be minimized and constant brightness can be maintained even in changes in the voltage of the AC power source by integrating a rectifying circuit into a light emitting device with a flip-chip structure, and in that there is no cumbersomeness of mounting an additional auxiliary device, resulting in increase of the degree of utilization of space and improved light output.
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H.C. Park & Associates PLC
Philogene Haissa
Seoul Opto Device Co., Ltd.
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