Light emitting device and method of manufacturing the same

Details Light emitting device and method of manufacturing the same Light emitting device and method of manufacturing the same

2009-11-19

2011-11-01

Louie, Wai Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S091000, C257S094000, C257S436000, C257SE33067

Reexamination Certificate

active

08049239

ABSTRACT:
Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ
, and the second period being identical to or smaller than λ
, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.

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