Light emitting device and method of manufacturing the same

Details Light emitting device and method of manufacturing the same Light emitting device and method of manufacturing the same

2007-05-30

2010-06-15

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S072000

Reexamination Certificate

active

07737443

ABSTRACT:
A light emitting device comprises an anode electrode layer disposed in a first direction, a cathode electrode layer disposed in a second direction different from the first direction, an emitting area with a pixel forming on an area crossed by the anode electrode layer and the cathode electrode layer and a sub-electrode layer disposed outside of the emitting area and electrically connected with at least two the anode electrode layers.

REFERENCES:
patent: 7485893 (2009-02-01), Lee
patent: 2005/0012105 (2005-01-01), Yamazaki et al.
patent: 2005/0077818 (2005-04-01), Hieda et al.
patent: 2005/0259056 (2005-11-01), Hanaoka et al.
patent: 2007/0030218 (2007-02-01), Ahn

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