Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2007-10-17
2010-12-28
Stark, Jarrett J (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S029000, C438S039000, C257S631000
Reexamination Certificate
active
07858418
ABSTRACT:
Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.
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Hino Tomonori
Kikuchi Yuichiro
Kuramochi Hisayoshi
Ohashi Tatsuo
Okano Nobukata
SNR Denton US LLP
Sony Corporation
Stark Jarrett J
Tobergte Nicholas
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