Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-05-20
2010-02-16
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000
Reexamination Certificate
active
07663142
ABSTRACT:
To provide a light emitting device capable of promoting an efficiency of taking out light to outside and achieving highly reliable bright image display by lower power consumption, in a light emitting device including a plurality of pixels and including a transistor and a pixel electrode electrically connected to the transistor at each of the plurality of pixels, an insulating film provided below the pixel electrode includes an opening portion an side surface of which is a curved face at a light emitting region. Light emitted from a light emitting element is focused by the curved face provided at the insulating film to reduce propagation thereof in a lateral direction, the efficiency of taking out the light is promoted and therefore, bright image display can be achieved without particularly increasing a current amount to be injected.
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Cook Alex Ltd.
Nguyen Joseph
Parker Kenneth A
Semiconductor Energy Laboratory Co,. Ltd.
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