Light emitting device and method of manufacturing the same

Details Light emitting device and method of manufacturing the same Light emitting device and method of manufacturing the same

2007-03-02

2009-11-03

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257SE33001

Reexamination Certificate

active

07612380

ABSTRACT:
A light emitting device and a method of manufacturing the same are provided. The light emitting device comprises a first conductive type lower semiconductor layer, a current diffusion layer, a first conductive type upper semiconductor layer, an active layer, and a second conductive type semiconductor layer. The current diffusion layer is formed on the first conductive type lower semiconductor layer. The first conductive type upper semiconductor layer is formed on the current diffusion layer. The active layer is formed on the first conductive type upper semiconductor layer. The second conductive type semiconductor layer is formed on the active layer.

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patent: 10-2004-0094700 (2006-05-01), None

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