Light emitting device and method of manufacturing the same

Details Light emitting device and method of manufacturing the same Light emitting device and method of manufacturing the same

2007-09-04

2007-09-04

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S081000, C257S083000, C257S084000, C257S089000, C257S098000

Reexamination Certificate

active

10918419

ABSTRACT:
To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes, an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.

REFERENCES:
patent: 5929474 (1999-07-01), Huang et al.
patent: 5952778 (1999-09-01), Haskal et al.
patent: 6072450 (2000-06-01), Yamada et al.
patent: 6369495 (2002-04-01), Codama et al.
patent: 6420834 (2002-07-01), Yamazaki et al.
patent: 6489631 (2002-12-01), Young et al.
patent: 6593691 (2003-07-01), Nishi et al.
patent: 6812637 (2004-11-01), Cok et al.
patent: 6830494 (2004-12-01), Yamazaki et al.
patent: 2001/0022496 (2001-09-01), Kobayashi et al.
patent: 2001/0043046 (2001-11-01), Fukunaga
patent: 2002/0158835 (2002-10-01), Kobayashi et al.
patent: 2004/0003939 (2004-01-01), Nishi et al.
patent: 2005/0035708 (2005-02-01), Yamazaki et al.
patent: 10-1892852 (1998-07-01), None
patent: 2001-254169 (2001-09-01), None
patent: 2001-345179 (2001-12-01), None
patent: 2002-318553 (2002-10-01), None
patent: 2002-318556 (2002-10-01), None
Response to Election, Amendment B and Interference Suggestion along with pending claims for U.S. Appl. No. 10/601,793, Oct. 28, 2005, 19 pages.
S. M. Sze, “Dielectric and Polysilicon Film Deposition”, VLSI Technology, pp. 262-263 (1988).
Taiwan Office Action (U.S. Appl. No. 092101383, TW6197), dated Aug. 24, 2006 and full translation, 9 pages.

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