Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2007-04-17
2007-04-17
Munson, Gene M. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S096000, C257S098000, C257S102000, C257S103000
Reexamination Certificate
active
10930915
ABSTRACT:
A light emitting device and a method of manufacturing the same are provided. A light emitting device has a structure wherein a substrate, an n-type clad layer, a light emitting layer, a p-type clad layer, an ohmic contact layer, and a reflective layer are successively stacked. The ohmic contact layer is formed by adding an additional element to an indium oxide. According to the light emitting device and the method of manufacturing the same, the characteristics of ohmic contact with a p-type clad layer is improved, thus increasing the efficiency and yield of wire bonding during packaging FCLEDS. Also, it is possible to increase the light emitting efficiency and life span of light emitting devices due to the low contactless resistance and the excellent electric current and voltage characteristic.
REFERENCES:
patent: 6593597 (2003-07-01), Sheu
patent: 6603146 (2003-08-01), Hata et al.
patent: 6794690 (2004-09-01), Uemura
patent: 6797987 (2004-09-01), Chen
patent: 6869820 (2005-03-01), Chen
patent: 6936859 (2005-08-01), Uemura et al.
patent: 7005684 (2006-02-01), Uemura et al.
patent: P-1999-0088218 (1999-12-01), None
patent: 10-2002-0026737 (2002-04-01), None
Korean Office Action for Application No. 10-2003-0062830, dated Aug. 30, 2005, and translation.
European Search Report issue in Corres. EP 04255416 on Oct. 27, 2006, The Hague, The Netherlands.
Gessmann, T., et al., “GaInN light-emitting diodes with omni directional reflectors”, Proceedings of the SPIE—The International Society for Optical Engineering, Jul. 2003, pp. 139-144, vol. 4996, SPIE, USA.
Kim, D.W., et al., “A study of transparent indium tin oxide(ITO)contact to p-GaN”, Thin Solid Films, Nov. 2001, pp. 87-92, vol. 398-399, Elsevier Sequoia, The Netherlands.
Aliyu, Y.H., et al., “AlGaInP LEDs using reactive thermally evaporated transparent conducting indium tin oxide(ITO)”, Electronics Letters, Dec. 7, 1995, pp. 2210-2212, vol. 31, No. 25, IEE, Stevenage, England, GB.
Horng, Ray-Hua, et al., “Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN”, Applied Physics Letters, Oct. 29, 2001, pp. 2925-2927, vol. 79, No. 18, American Institute of Physics, Melville, NY, US.
Leem Dong-seok
Seong Tae-yeon
Song June-o
Buchanan & Ingersoll & Rooney PC
Munson Gene M.
LandOfFree
Light emitting device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light emitting device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3758016