Light emitting device and method of manufacturing the same

Details Light emitting device and method of manufacturing the same Light emitting device and method of manufacturing the same

2011-08-30

2011-08-30

Dickey, Thomas L (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C257S088000, C257SE33055

Reexamination Certificate

active

08008098

ABSTRACT:
A method of manufacturing a light emitting device is provided. An epitaxial layer is first formed at a plurality of separated regions on a substrate and a second electrode layer is formed on the epitaxial layer. Subsequently, the substrate is removed from the epitaxial layer and a first electrode layer is formed under the epitaxial layer, after which the second electrode layer is divided into chip units.

REFERENCES:
patent: 4149175 (1979-04-01), Inoue et al.
patent: 6884646 (2005-04-01), Wu et al.
patent: 2007-81312 (2007-03-01), None
patent: 10-0622818 (2006-09-01), None
patent: WO-02/19439 (2002-03-01), None
patent: WO-2006/023088 (2006-03-01), None

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