Light emitting device and method of forming the same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Reexamination Certificate

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Details

C257S099000, C257S103000, C438S022000, C438S037000

Reexamination Certificate

active

07816695

ABSTRACT:
An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate.

REFERENCES:
patent: 5710454 (1998-01-01), Wu
patent: 6838704 (2005-01-01), Lin et al.

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