Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2009-01-16
2010-10-19
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S099000, C257S103000, C438S022000, C438S037000
Reexamination Certificate
active
07816695
ABSTRACT:
An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate.
REFERENCES:
patent: 5710454 (1998-01-01), Wu
patent: 6838704 (2005-01-01), Lin et al.
Lin Jin-Ywan
Tu Chuan-Cheng
Bacon & Thomas PLLC
Dang Phuc T
Epistar Corporation
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