Light emitting device and method of forming the same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Reexamination Certificate

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C257S079000, C438S022000

Reexamination Certificate

active

07488988

ABSTRACT:
A light emitting device includes a substrate and an adhesive layer on the substrate. At least two multi-layer epitaxial structures are on the substrate. Each structure sequentially includes an upper cladding layer, an active layer, a lower cladding layer, an ohmic contact epitaxial layer, and a first ohmic contact electrode adhered to the substrate by the adhesive layer. A second ohmic contact electrode is on the lower cladding layer. A channel divides the active layer into two portions. A first electrode is on the lower cladding layer corresponding to a first portion of the active layer. A second electrode is on the second ohmic contact electrode corresponding to a second portion of the active layer. A connection layer is formed in the structure so as to couple the first electrode with the first ohmic contact electrode. A dielectric layer is between these two structures. A conductive line couples the electrodes of these two structures.

REFERENCES:
patent: 6462358 (2002-10-01), Lin et al.
patent: 6583448 (2003-06-01), Lin et al.
patent: 7391061 (2008-06-01), Shieh et al.

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