Light emitting device and method of fabricating the same

Details Light emitting device and method of fabricating the same Light emitting device and method of fabricating the same

2006-02-07

2006-02-07

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S013000, C257S094000, C257S099000, C257S103000, C257S918000

Reexamination Certificate

active

06995401

ABSTRACT:
A light emitting device having an oxide transparent electrode layer as an emission drive electrode, and designed so that damage possibly occurs during bonding of electrode wires to the bonding pads is less influential to a light emitting layer portion is disclosed. The light emitting device has the light emitting layer portion composed of a compound semiconductor and has a double heterostructure in which a first-conductivity-type cladding layer, an active layer and a second-conductivity-type cladding layer are stacked in this order; and the light emitting layer portion is applied with emission drive voltage through an oxide transparent electrode layer formed so as to cover the main surface of the second-conductivity-type cladding layer. A bonding pad composed of a metal is disposed on the oxide transparent electrode layer, and to the bonding pad an electrode wire for current supply is bonded. Between the second-conductivity cladding layer and the oxide transparent electrode layer, a cushion layer composed of a compound semiconductor having a dopant concentration lower than that of the second-conductivity-type cladding layer is disposed.

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patent: 5977565 (1999-11-01), Ishikawa et al.
patent: 6121635 (2000-09-01), Watanabe et al.
patent: 6838705 (2005-01-01), Tanizawa
patent: 1-225178 (1989-09-01), None
patent: 6-188455 (1994-07-01), None

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