Light emitting device and method of fabricating the same

Details Light emitting device and method of fabricating the same Light emitting device and method of fabricating the same

2011-07-05

2011-07-05

Gebremariam, Samuel A (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S455000, C438S458000, C438S459000, C438S970000, C438S977000

Reexamination Certificate

active

07972892

ABSTRACT:
A composite growth-assisting substrate10is formed by epitaxially growing a separation-assisting compound semiconductor layer10kcomposed of a non-GaAs III-V compound semiconductor single crystal, and then a sub-substrate10ecomposed of a GaAs single crystal in this order, on a first main surface of a substrate bulk10mcomposed of a GaAs single crystal. The sub-substrate portion10eis then separated from the composite growth-assisting substrate10, so as to be left as a residual substrate portion1on a second main surface of the main compound semiconductor layer40, and a portion of the residual substrate portion1is cut off to thereby form a cut-off portion1jhaving a bottom surface used as a light extraction surface. By this configuration, the light emitting device is provided as allowing effective use of the GaAs substrate, and increasing the light extraction efficiency.

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Sanken Electric Co., Ltd.,Nikkei Electonics, Oct. 21, 2002, pp. 124-132.

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